Electron Mobility in γ−Al2O3/SrTiO3

Electron transport in nitrogen-polar high electron mobility transistors

Quantum Confinement in High Electron Mobility Transistors

Modulation-doped semiconductor nanostructures exhibit extraordinary electrical and optical properties that are quantum mechanical in nature. The heart of such structures lies in the heterojunction of two epitaxially grown semiconductors with different band gaps. Quantum confinement in this heterojunction is a phenomenon that leads to the quantization of the conduction and the valence band into ...

Electron mobility in Si delta doped GaAs

We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.

Intrinsic electron mobility limits in b-Ga2O3

By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in b–Ga2O3 to <200 cm/V s at 300 K for donor doping densities lower than !10 cm. Despite similar electron effective mass of b–Ga2O3 to GaN, the electron mobility is !10" lower because of a massive Fr€ohlich interactio...

Anomalous electron mobility modeling in Hall thrusters

Accurate modeling of the anomalous electron mobility is crucial for successful simulation of Hall thrusters. Existing computational models for the anomalous electron mobility are used to simulate the UM/AFRL P5 Hall thruster in a 2D axisymmetric hybrid PIC-MCC code. Comparison to experimental results indicates that while these computational models can be tuned to reproduce the correct thrust or...